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absolute maximum ratings (per die) parameter units i d @ v gs = 4.5v, t c = 25c continuous drain current 1.07 i d @ v gs = 4.5v, t c = 100c continuous drain current 0.67 i dm pulsed drain current 4.28 p d @ t c = 25c max. power dissipation 1.0 w linear derating factor 0.01 w/c v gs gate-to-source voltage 10 v e as single pulse avalanche energy 13 mj i ar avalanche current 1.07 a e ar repetitive avalanche energy 0.1 mj dv/dt peak diode recovery dv/dt 7.0 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 (0.63 in./1.6 mm from case for 10s) weight 1.3 (typical) g c a www.irf.com 1 product summary part number radiation level r ds(on) i d IRHLG770Z4 100k rads (si) 0.6 ? 1.07a irhlg730z4 300k rads (si) 0.6 ? 1.07a for footnotes refer to the last page pre-irradiation radiation hardened IRHLG770Z4 logic level power mosfet 60v, quad n-channel thru-hole (mo-036ab) mo-036ab features: 5v cmos and ttl compatible fast switching single event effect (see) hardened low total gate charge simple drive requirements ease of paralleling hermetically sealed ceramic package light weight international rectifier?s r7 tm logic level power mosfets provide simple solution to interfacing cmos and ttl control circuits to power devices in space and other radiation environments. the threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. this is achieved while maintaining single event gate rupture and single event burnout immunity. these devices are used in applications such as current boost low signal source in pwm, voltage comparator and operational amplifiers. technology complimentary p-channel available - irhlg7970z4 pd-95865
IRHLG770Z4 pre-irradiation 2 www.irf.com for footnotes refer to the last page source-drain diode ratings and characteristics (per die) parameter min typ max units test conditions i s continuous source current (body diode) ? ? 1.07 i sm pulse source current (body diode) ? ? 4.28 v sd diode forward voltage ? ? 1.2 v t j = 25c, i s = 1.07a, v gs = 0v t rr reverse recovery time ? ? 51 ns t j = 25c, i f = 1.07a, di/dt 100a/ s q rr reverse recovery charge ? ? 70 nc v dd 25v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a note: corresponding spice and saber models are available international rectifier website. thermal resistance (per die) parameter min typ max units test conditions r thja junction-to-ambient ? ? 125
c/w electrical characteristics for each n-channel device @tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage 60 ? ? v v gs = 0v, i d = 250 a ? bv dss / ? t j temperature coefficient of breakdown ? 0.08 ? v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.6 ? v gs = 4.5v, i d = 0.67a resistance v gs(th) gate threshold voltage 1.0 ? 2.0 v v ds = v gs , i d = 250 a ? v gs(th) / ? t j gate threshold voltage coefficient ? -4.04 ? mv/c g fs forward transconductance 0.9 ? ? s v ds = 10v, i ds = 0.67a i dss zero gate voltage drain current ? ? 1.0 v ds = 48v ,v gs = 0v ??10 v ds = 48v, v gs = 0v, t j =125c i gss gate-to-source leakage forward ? ? 100 v gs = 10v i gss gate-to-source leakage reverse ? ? -100 v gs = -10v q g total gate charge ? ? 2.5 v gs = 4.5v, i d = 1.07a q gs gate-to-source charge ? ? 0.5 nc v ds = 30v q gd gate-to-drain (?miller?) charge ? ? 1.6 t d (on) turn-on delay time ? ? 6.0 v dd = 30v, i d = 1.07a, t r rise time ? ? 2.4 v gs = 5.0v, r g = 24 ? t d (off) turn-off delay time ? ? 34 t f fall time ? ? 11 l s + l d total inductance ? 10 ? measured from drain lead (6mm /0.25in from pack.) to source lead (6mm/0.25in from pack.)with source wire internally bonded from source pin to drain pad c iss input capacitance ? 162 ? v gs = 0v, v ds = 25v c oss output capacitance ? 39 ? pf f = 1.0mhz c rss reverse transfer capacitance ? 2.1 ? na nh ns a r g gate resistance ? 13.8 ? ? f = 1.0mhz, open drain
www.irf.com 3 pre-irradiation IRHLG770Z4 radiation characteristics international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-39 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. IRHLG770Z4 fig a. single event effect, safe operating area 0 10 20 30 40 50 60 70 -12 -10 -8 -6 -4 -2 0 vgs vds br i au table 1. electrical characteristics for each n-channel device @tj = 25c, post total dose irradiation parameter up to 300k rads (si) 1 units test conditions min max bv dss drain-to-source breakdown voltage 60 ? v v gs = 0v, i d = 250a v gs(th) gate threshold voltage 1.0 2.0 v gs = v ds , i d = 250a i gss gate-to-source leakage forward ? 100 na v gs = 10v i gss gate-to-source leakage reverse ? -100 v gs = -10v i dss zero gate voltage drain current ? 1.0 a v ds = 48v, v gs = 0v r ds(on) static drain-to-source on-state resistance (to-39) ? 0.5 ? v gs = 4.5v, i d = 0.67a r ds(on) static drain-to-source on-state v sd diode forward voltage ? 1.2 v v gs = 0v, i d = 1.07a resistance (mo-036) ? 0.6 ? v gs = 4.5v, i d = 0.67a 1. part numbers irhlg7670z4, irhlg7630z4 table 2. sin g le event effect safe operatin g area (per die) ion let energy range vds (v) (mev/(m g /cm 2 )) (mev) ( m) @vgs= @vgs= @vgs= @vgs= @vgs= @vgs= @vgs= @vgs= 0v -2v -4v -5v -6v -7v -8v -10v br 37 305 39 60 60 60 60 60 35 30 20 i 60 370 34 60 60 60 60 60 20 15 - au 84 390 30 60 60 60 60 - - - -
IRHLG770Z4 pre-irradiation 4 www.irf.com fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 15 22.533.54 v gs , gate-to-source voltage (v) 0.1 1 10 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) v ds = 25v 2 0 s pulse width t j = 150c t j = 25c -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.0 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) v gs = 4.5v i d = 1.07a 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 25c vgs top 10v 5.0v 4.5v 4.0v 3.5v 3.0v 2.75v bottom 2.5v 2.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 150c 2.5v vgs top 10v 5.0v 4.5v 4.0v 3.5v 3.0v 2.75v bottom 2.5v
www.irf.com 5 pre-irradiation IRHLG770Z4 fig 6. typical threshold voltage vs temperature fig 5. typical drain-to-source breakdown voltage vs temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , temperature ( c ) 50 60 70 80 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) i d = 1.0ma -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , temperature ( c ) 0.0 0.5 1.0 1.5 2.0 2.5 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 50a i d = 250a i d = 1.0ma i d = 150ma

1 10 100 v ds , drain-to-source voltage (v) 0 40 80 120 160 200 240 280 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 00.511.522.533.54 q g, total gate charge (nc) 0 2 4 6 8 10 12 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 48v v ds = 30v v ds = 12v i d = 1.07a for test circuit see figure 15
IRHLG770Z4 pre-irradiation 6 www.irf.com

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1e-005 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 100 1000 t h e r m a l r e s p o n s e ( z t h j a ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc p t t dm 1 2

25 50 75 100 125 150 t c , case temperature (c) 0 0.2 0.4 0.6 0.8 1.0 1.2 i d , d r a i n c u r r e n t ( a )
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# 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by r ds (on)
www.irf.com 7 pre-irradiation IRHLG770Z4 fig 13b. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs fig 13c. unclamped inductive waveforms t p v (br)dss i as #
25 50 75 100 125 150 starting t j , junction temperature (c) 0 4 8 12 16 20 24 28 32 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 0.48a 0.68a bottom 1.07a fig 12. typical source-to-drain diode forward voltage 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v sd , source-to-drain voltage (v) 0.01 0.1 1 10 i s d , r e v e r s e d r a i n c u r r e n t ( a ) v gs = 0v t j = 150c t j = 2 5 c
IRHLG770Z4 pre-irradiation 8 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - &' fig 15b. gate charge test circuit fig 15a. basic gate charge waveform fig 14a. switching time test circuit
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0.1 % ( ( ) + - v ds 90% 10% v gs t d(on) t r t d(off) t f fig 14b. switching time waveforms
www.irf.com 9 pre-irradiation IRHLG770Z4 pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. 10 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. total dose irradiation with v ds bias. 48 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = 25v, starting t j = 25c, l= 22.5mh peak i l = 1.07a, v gs = 10v i sd 1.07a, di/dt 214a/ s, v dd 60v, t j 150c footnotes: case outline and dimensions ? mo-036ab ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 12/2006 q3 q4 q2 q1 q3 q4 q2 q1

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